![]() ![]() VTO is positive (negative) for enhancement mode and negative (positive) for depletion mode N-channel (P-channel) devices. These parameters are computed if the process parameters(NSUB, TOX.) are given, but user-specified values always override. The DC characteristics of the level 1 through level 3 MOSFETs are defined by the device parameters VTO, KP, LAMBDA, PHI and GAMMA. Krummenacher, EPFL-DE-LEG, June 1997.ġ4 BSIM4.6.1 from the University of California, Berkeley BSIM Research Group, May 18, 2007. See and "The EPFL-EKV MOSFET Model Equations for Simulation, Version 2.6", M. ERL M90/19, Electronics Research Laboratory, University of California, Berkeley, March 1990)Ĩ BSIM3v3.3.0 from University of California, Berkeley as of July 29, 2005ĩ BSIMSOI3.2 (Silicon on insulator) from the BSIM Research Group of the University of California, Berkeley, February 2004.ġ2 EKV 2.6 based on code from Ecole Polytechnique Federale de Lausanne. Newton, A Simple MOSFET Model for Circuit Analysis and its application to CMOS gate delay analysis and series-connected MOSFET Structure, ERL Memo No. ERL M90/90, Electronics Research Laboratory University of California, Berkeley, October 1990)Ħ MOS6 (see T. ERL M85/42, Electronics Research Laboratory University of California, Berkeley, May 1985)ĥ BSIM2 (see Min-Chie Jeng, Design and Modeling of Deep-Submicrometer MOSFETs ERL Memo Nos. M80/7, Electronics Research Laboratory University of California, Berkeley, October 1980)ģ MOS3, a semi-empirical model(see reference for level 2)Ĥ BSIM (see B. Liu, The Simulation of MOS Integrated Circuits Using SPICE2, ERL Memo No. The model parameter LEVEL specifies the model to be used. There are seven monolithic MOSFET device models. LTspice contains seven different types of monolithic MOSFET's and one type of vertical double diffused Power MOSFET. The temperature specification is ONLY valid for level 1, 2, 3, and 6 MOSFETs, not for level 4, 5 or 8 BSIM devices. The optional TEMP value is the temperature at which this device is to operate, and overrides the temperature specification on the. TRAN control line, when a transient analysis is desired starting from other than the quiescent operating point. The initial condition specification using IC=VDS, VGS, VBS is for use with the UIC option on the. OFF indicates an initial condition on the device for DC analysis. PD and PS default to zero while NRD and NRS to one. NRD and NRS designate the equivalent number of squares of the drain and source diffusions these values multiply the sheet resistance RSH specified on the. PD and PS are the perimeters of the drain and source junctions, in meters. If any of L, W, AD, or AS are not specified, default values are used. Note that the suffix u specifies µm and p square µm. AD and AS are the areas of the drain and source diffusions, in square meters. L and W are the channel length and width, in meters. Nd, Ng, NS, and Nb are the drain, gate, source, and bulk i.e., substrate nodes. Monolithic MOSFETS are four terminal devices. The model card keyword VDMOS specifies a vertical double diffused power MOSFET. The model card keywords NMOS and PMOS specify a monolithic N- or P- channel MOSFET transistor. The MOSFET's model card specifies which type is intended. Symbol Names: NMOS, NMOS3, PMOS, PMOS3There are two fundamentally different types of MOSFETS in LTspice, monolithic MOSFETs and a new vertical double diffused power MOSFET model. ![]()
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